High-Performance IGBT Module: Infineon IHW30N120R5 for Robust Power Conversion

Release date:2025-10-29 Number of clicks:145

High-Performance IGBT Module: Infineon IHW30N120R5 for Robust Power Conversion

In the realm of power electronics, the demand for efficient, reliable, and high-performance switching devices continues to grow. The Infineon IHW30N120R5 IGBT module stands out as a premier solution designed to meet these rigorous demands, offering exceptional performance in a variety of power conversion applications. This module combines advanced trench and field-stop technology with rugged construction, making it an ideal choice for systems requiring high power density and operational robustness.

Engineered for high-frequency switching, the IHW30N120R5 features a low saturation voltage (Vce(sat)) and minimal switching losses, which significantly enhance overall system efficiency. Its high current capability of 60A and a blocking voltage of 1200V allow it to handle substantial power levels in industrial drives, renewable energy systems, uninterruptible power supplies (UPS), and welding equipment. The module’s internal anti-parallel diode ensures efficient reverse recovery characteristics, further optimizing performance in inverter and converter topologies.

A key advantage of this IGBT is its exceptional thermal performance, facilitated by a low thermal resistance junction-to-case (Rth(j-c)) design. This allows for effective heat dissipation, enabling operation at high temperatures without compromising reliability. The module’s robust construction ensures high resistance to overloads and short circuits, providing long-term durability in demanding environments.

Moreover, the IHW30N120R5 is designed for ease of integration, featuring a compact and industry-standard package that simplifies mounting and system assembly. Its high noise immunity and dv/dt controllability make it suitable for noisy electrical environments, reducing the need for additional protective components.

ICGOOODFIND: The Infineon IHW30N120R5 IGBT module exemplifies cutting-edge power semiconductor technology, delivering high efficiency, thermal robustness, and reliability for advanced power conversion systems.

Keywords: IGBT Module, High Power Density, Thermal Performance, Switching Efficiency, Robust Design

Home
TELEPHONE CONSULTATION
Whatsapp
Semiconductor Technology