Infineon IPG20N04S4L-08 OptiMOS 5 Power MOSFET: Key Features and Application Benefits

The Infineon IPG20N04S4L-08 is a state-of-the-art Power MOSFET from the advanced OptiMOS™ 5 technology family, engineered to deliver superior performance in a wide range of power conversion applications. This 40 V, 20 mΩ N-channel MOSFET in a compact PG-TSON-8-5 (5.0x6.0 mm) package sets a new benchmark for efficiency, power density, and reliability.

A primary highlight of this device is its exceptionally low gate charge (Q G) and outstanding reverse recovery performance. These characteristics are crucial for minimizing switching losses, which directly translates to higher efficiency in switched-mode power supplies (SMPS), motor drives, and DC-DC converters. The low R DS(on) of just 20 mΩ maximizes conduction efficiency, enabling more power to be delivered with less energy wasted as heat.

Furthermore, the MOSFET boasts an industry-leading figure-of-merit (FOM), which is a key indicator of its superior switching performance. This makes it an ideal choice for high-frequency switching applications, allowing designers to shrink the size of magnetic components and capacitors, thereby increasing the overall power density of the end system. The optimized parasitic capacitance ensures smooth switching, which reduces electromagnetic interference (EMI) and simplifies filter design.

The benefits extend beyond pure electrical performance. The robust and rugged design ensures high reliability under stressful conditions, including avalanche and commutation modes. This makes it suitable for demanding automotive environments, industrial automation, and server power supplies. The small footprint of the package also addresses the constant market need for miniaturization without compromising thermal performance or power handling capability.

ICGOOODFIND: The Infineon IPG20N04S4L-08 OptiMOS™ 5 MOSFET is a powerhouse component that excels in boosting efficiency, power density, and reliability for modern power electronics, making it an optimal solution for next-generation designs.

Keywords: Power Efficiency, High-Frequency Switching, Low Gate Charge, Power Density, Robustness.