**HMC913LC4B: A High-Performance GaAs pHEMT MMIC Distributed Amplifier from 2 to 20 GHz**

The relentless drive for higher data rates and wider bandwidths in modern RF and microwave systems, spanning commercial, aerospace, and defense applications, demands amplifiers capable of exceptional performance over multi-octave frequency ranges. The **HMC913LC4B** stands as a premier solution, a **monolithic microwave integrated circuit (MMIC)** distributed amplifier engineered to deliver groundbreaking performance from **2 to 20 GHz**.

Constructed on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this amplifier leverages the inherent advantages of distributed, or traveling-wave, amplifier topology. This design effectively absorbs the transistor parasitics into artificial transmission lines, enabling it to achieve a remarkably flat gain and excellent return loss across an incredibly wide instantaneous bandwidth. The result is a single, compact component that eliminates the need for complex gain-block combinations, simplifying system design and enhancing reliability.

The key performance metrics of the HMC913LC4B are impressive. It typically provides **17 dB of gain** with an exceptional flatness of ±1.0 dB across the entire 2 to 20 GHz spectrum. It maintains a high output power of +22 dBm at 1 dB compression (P1dB) and features a high output third-order intercept point (OIP3) of +32 dBm, making it an excellent choice for handling complex modulated signals with minimal distortion. Furthermore, it boasts a low noise figure of approximately 4.5 dB, which is outstanding for a wideband power amplifier. Housed in a leadless, RoHS-compliant 4x4 mm LCC4 surface-mount package, it is designed for easy integration into high-frequency printed circuit boards and is capable of operating over a supply range of +5V (120 mA typical), making it suitable for a wide array of portable and fixed-installation equipment.

**ICGOODFIND:** The HMC913LC4B is a benchmark GaAs pHEMT MMIC distributed amplifier, offering an unparalleled combination of wide bandwidth, high linearity, and solid gain in a miniature package. It is an optimal choice for designers of test and measurement equipment, electronic warfare (EW) systems, radar, and fiber optic infrastructure, where wide instantaneous bandwidth and high dynamic range are paramount.

**Keywords:** Distributed Amplifier, Wideband, GaAs pHEMT, High Linearity, MMIC