Infineon BSP171PH6327: Key Features and Application Circuit Design Guide
The Infineon BSP171PH6327 is a versatile N-channel enhancement mode Power MOSFET fabricated using Infineon's proprietary Small Signal PowerMOS (SSP) technology. Housed in a compact SOT-223 package, it is engineered to deliver high performance in a minimal footprint, making it an ideal choice for a wide range of low-to-medium power switching applications. Its combination of low threshold voltage, high efficiency, and robust integration capabilities positions it as a key component in modern electronic design.
Key Features
The standout characteristics of the BSP171PH6327 that define its application potential include:
Low Threshold Voltage (VGS(th)): Typically 1.35V. This feature is crucial for enabling direct control from low-voltage microcontrollers (MCUs) and logic circuits (e.g., 3.3V or 5V systems) without requiring additional level-shifting circuitry, simplifying design and reducing component count.
Low On-Resistance (RDS(on)): A maximum of 280 mΩ at 10V gate-source voltage. Low RDS(on) minimizes conduction losses, leading to higher efficiency and reduced heat generation during operation.
High Continuous Drain Current (ID): Capable of handling up to 1.7A, making it suitable for driving a variety of loads such as relays, motors, LEDs, and solenoids.
Small SOT-223 Package: Offers an excellent balance between power handling capability and board space savings. The package also features a drain tab that aids in thermal performance by providing a efficient path for heat dissipation.
Logic Level Compatible: As a direct result of its low threshold voltage, it is fully compatible with logic-level signals, ensuring easy integration into digital systems.
Application Circuit Design Guide
A common application for the BSP171PH6327 is as a low-side switch. This configuration is widely used for controlling power to a load connected to the positive supply rail (VDD).
Basic Low-Side Switch Circuit:
