Infineon BSB056N10NN3G: A High-Performance OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, reliability, and thermal performance are paramount. The Infineon BSB056N10NN3G stands out as a premier solution, exemplifying the advanced OptiMOS™ 5 technology that has set new benchmarks in the power MOSFET market. Designed for a wide array of applications, from server and telecom power supplies to industrial motor drives and high-frequency DC-DC converters, this N-channel MOSFET delivers exceptional performance where it matters most.

A key highlight of the BSB056N10NN3G is its ultra-low on-state resistance (RDS(on)) of just 5.6 mΩ maximum at 10 V. This remarkably low resistance is crucial for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, systems can achieve greater power density and require less cooling, leading to smaller form factors and lower overall costs.

Built on an advanced silicon process, this 100 V MOSFET is optimized for high-frequency switching performance. The device features significantly reduced gate charge (Qg) and output charge (Qoss), enabling faster switching transitions. This is essential for modern switch-mode power supplies (SMPS) that operate at higher frequencies to reduce the size of passive components like inductors and capacitors. The excellent figure-of-merit (FOM) ensures a superior balance between switching and conduction losses.

Furthermore, the BSB056N10NN3G is housed in a robust and space-saving SuperSO8 package. This package offers a very low thermal resistance from junction to case (RthJC), ensuring efficient heat dissipation away from the silicon die. Its superior power density makes it an ideal choice for compact, high-power designs. The package also provides improved mechanical robustness and is designed for automated assembly processes, enhancing manufacturing reliability.

Infineon has also placed a strong emphasis on reliability. The device offers an extended safe operating area (SOA) and is highly resistant to avalanche breakdown, providing designers with a greater margin of safety in demanding operational conditions. This ruggedness ensures long-term durability and system stability.

ICGOOODFIND: The Infineon BSB056N10NN3G is a top-tier power MOSFET that masterfully combines ultra-low resistance, superior switching capabilities, and excellent thermal performance in a compact package. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: OptiMOS 5, Ultra-low RDS(on), High-frequency switching, SuperSO8 package, Power density.