HMC442LC3BTR: A High-Performance GaAs MMIC Double-Balanced Mixer for Microwave Applications

Release date:2025-09-04 Number of clicks:73

**HMC442LC3BTR: A High-Performance GaAs MMIC Double-Balanced Mixer for Microwave Applications**

The **HMC442LC3BTR** is a state-of-the-art **GaAs MMIC (Gallium Arsenide Monolithic Microwave Integrated Circuit) double-balanced mixer** engineered to meet the rigorous demands of modern microwave systems. Operating across a wide **local oscillator (LO) frequency range from 6 GHz to 20 GHz**, this device is designed for up-conversion and down-conversion applications in point-to-point radios, satellite communications, military radar, and sophisticated test equipment. Its robust performance and integrated design make it a cornerstone component for RF engineers seeking reliability in high-frequency circuits.

A key advantage of the HMC442LC3BTR is its exceptional **conversion loss**, which is typically as low as **8.2 dB**, ensuring minimal signal degradation during the mixing process. The mixer also boasts excellent **LO-to-RF and LO-to-IF isolation**, typically greater than **30 dB**, which is critical for suppressing unwanted local oscillator feedthrough and reducing the need for additional filtering. This high level of isolation simplifies system design and enhances overall signal integrity.

Housed in a compact, surface-mount **3x3 mm leadless chip carrier (LCC) package**, the device is optimized for high-density PCB layouts, making it ideal for space-constrained applications. The mixer requires a relatively low **LO drive power of +13 dBm**, which contributes to lower system power consumption and eases the design of the LO signal chain. Furthermore, it supports a broad **intermediate frequency (IF) bandwidth from DC to 6 GHz**, providing designers with significant flexibility in configuring their systems for various IF standards.

The **double-balanced topology** is fundamental to its performance. This structure inherently suppresses even-order harmonics and amplitude modulation (AM) noise from the LO, resulting in cleaner output spectra and improved dynamic range. Constructed using a gallium arsenide process, the MMIC delivers superior high-frequency performance and temperature stability compared to silicon-based alternatives.

**ICGOOODFIND**: The HMC442LC3BTR stands out as a superior solution for high-frequency mixing, delivering an optimal blend of low conversion loss, high isolation, and broad operational bandwidth in a highly integrated MMIC form factor.

**Keywords**: GaAs MMIC, Double-Balanced Mixer, Conversion Loss, LO Isolation, Microwave Applications.

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